SLD233VL

SLD233VL Index-Guided High Power AlGaAs Laser Diode Description The SLD233VL is a high power index-guided AlGaAs laser diode. Features Low noise Low power consumption Applications Pickups for MiniDisc recording/playback Structure AlGaAs quantum well-structure laser diode PIN photodiode for optical power output monitor Recommended Operating Optical Power Output 30mW Absolute Maximum Ratings (Tc = 25°C) Optical power output PO 35 mW Reverse voltage VR LD 2 V PD 15 V Operating temperature Topr –10 to +60 °C Storage temperature Tstg –40 to +85 °C Connection Diagram 3 COMMON M-274 Pin Configuration PD 2 1 LD 2 1 3 1. LD ANODE 2. PD ANODE 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E97940-PS SLD233VL Optical and Electrical Characteristics (Tc = 25°C) Item Threshold current Operating current Operating voltage Oscillation wavelength Radiation angle Positional accuracy Ith Iop Vop λ θ// ∆X, ∆Y, ∆Z ∆φ⊥ ∆φ// ηD As γ PO = 4mW PO = 30mW 0.55 0.9 –16 0.7 PO = 35mW PO = 35mW PO = 35mW PO = 35mW PO = 35mW 780 26 7.4 Symbol Conditions Min. Typ. 30 70 2.0 790 28.5 8.5 Tc: Case temperature Max. 40 85 2.5 ...