SLA5027

MOS FET Array SLA5027 Absolute Maximum Ratings (Ta=25ºC) Symbol VDSS VGSS ID ID (pulse)*1 PT EAS*2 j-c Electrical Characteristics Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100µA, VGS = 0V VGS = ± 20V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 8A VGS = 4V, ID = 8A VDS = 10V f = 1.0MHz VGS = 0V ID = 8A VDD 30V RL = 3.75Ω VGS = 5V RG = 50Ω ISD = 10A, VGS = 0V min 60 ± 100 100 2.0 0.08 Ratings typ max (Ta=25ºC) Unit V µA µA V S Ω pF pF pF ns ns ns ns V External Dimensions SLA (LF800) 16.0±0.2 13.0±0.2 5 (Ta=25ºC, 4 circuits operate) 60 (Tc=25ºC,4 circuits operate) 8.5max 9.9±0.2 1.0 6.0 9.5min (10.4) 2.7 250 2.08 (Fin to lead terminal) AC1000 150 –55 to +150 *1 PW 250µs, duty 1% *2 VDD = 30V, L = 10mH, unclamped, RG = 50Ω VISO Tch Tstg mJ ºC/W Vrms ºC ºC 1.5 12.0 0.07 1100 500 170 50 250 250 180 1.0 a b Pin 1 1.2±0.15 0.85 +0.2 –0.1 12 1.45±0.15 11P2.54±0.7 =27.94±1.0 31.5 max 0.55 +0.2 –0.1 Lead plate thickness resins 0.8max Ratings 60 ± 20 ± 12 ± 48 Unit V V A A W W 31.0±0.2 3.2±0.15 24.4±0.2 16.4 ±0.2 Ellipse 3.2±0.15 3.8 4.8±0.2 1.7±0.1 2.2±0.7 1 2 3 4 5 6 7 8 9 10 11 12 1.5 a) Type No. b) Lot No. (Unit: mm) s ID — VDS Characteristics 10 s ID — VGS Characteristics 12 10 VDS = 10V s R DS (on) — I D Characteristics 0.1 8 8 6 VGS = 3V 6 4 RDS (on) (Ω) 4V 5V 10V VGS = 4V ID (A) ID (A) 4 Ta = 150ºC 75ºC 25ºC –55ºC 0.05 VGS = 10V 2 2 0 0 0.1 0 0 ...