Silicon Hyperabrupt Varactor Diode Chips
Silicon Hyperabrupt Varactor Diode Chips
SMV2019 to SMV2023 Features
I High Q for Low Loss Resonators I Low Leakage Curr...
Description
Silicon Hyperabrupt Varactor Diode Chips
SMV2019 to SMV2023 Features
I High Q for Low Loss Resonators I Low Leakage Current I High Tuning Ratio for Wideband VCOs I SPICE Model Parameters I Small Footprint Chip Design
Description
Alpha Industries’ product line of silicon hyperabrupt junction varactor diode chips are processed using established ion-implantation technology resulting in low RS wide tuning ratio devices with high Q values. These planar chips have a small outline size (12 x 12 mils nominal) and are fully passivated resulting in low leakage current and high reliability. These varactor chips are intended for assembly in hybrid integrated circuit resonators used in VCOs and analog tuned filters.
Electrical Specifications at 25°C
Part Number SMV2019-000 SMV2020-000 SMV2021-000 SMV2022-000 SMV2023-000 CJ @ 0 V (pF)1 Typ. 2.3 3.1 4.5 7.1 10.8 Min. 0.68 1.13 1.58 2.48 4.28 CJ @ 4 V (pF) Max. 0.88 1.43 1.98 3.08 5.28 CJ @ 20 V (pF) Min. 0.13 0.23 0.32 0.48 0.78 Max. 0.23 0.33 0.44 0.68 1.08 Q @ 4V 50 MHz2 Min. 500 500 500 400 400 1 GHz RS @ 4 V (Ω) Typ. 4.8 4.1 2.8 2.2 1.4 IR @17.6 V Contact (nA)3 Diam. (mils)4 Max. 50 50 50 50 50 Nom. 2.00 2.50 3.00 3.75 5.00
1. All capacitance values specified at 1 MHz. 2. 50 MHz Q calculated from 1 GHz RS and 1 MHz CJ.
3. VB at 10 µA specified at 22 V Min. 4. Outline drawing 149-801.
Outline Drawing
149-801
ANODE METALIZED GOLD DOT 0.002 (0.051 mm) DIA. MIN. 0.010 (0.254 mm) MIN. 0.014 (0.356 mm) MAX. SQ.
Absolute Maximum Ratings
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