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SML9030-T254

Seme LAB

P-CHANNEL MOS TRANSISTOR

SML9030–T254 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 ...


Seme LAB

SML9030-T254

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SML9030–T254 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) P–CHANNEL MOS TRANSISTOR VDSS ID(cont) RDS(on) FEATURES P CHANNEL REPETITIVE AVALANCHE RATED DYNAMIC dv/dt RATING 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) –50V –18A 0.14W 1 2 3 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 20.07 (0.790) 20.32 (0.800) 3.81 (0.150) BSC FAST SWITCHING EASE OF PARALLELING SIMPLE DRIVE REQUIREMENTS TO–254 – Metal Package Pin 1 – Drain Pin 2 – Source Pin 3 – Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ TSTG RqJC RqJA Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 ±20V (VGS = -10V , Tcase = 25°C) (VGS = -10V , Tcase = 100°C) -18A -13A -72A 88W 0.59W/°C 2 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current 1 370mJ -18A 8.8mJ -4.5V/ns –55 to +175°C –55 to +200°C 0.6°C/W 48°C/W Repetitive Avalanche Energy 1 Peak Diode Recovery 3 Operating Junction Temperature Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Notes 1) Repetitive Rating: Pulse width limited by maximum junction temperature. 2) @ VDD = -25V , L = 1.3mH , RG = 25W , IAS = -18A , Starting TJ = 25°C. 3) @ ISD £ -18A , di/dt £ 170A/ms , VDD £ BVDSS , TJ...




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