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SML80A12

Seme LAB
Part Number SML80A12
Manufacturer Seme LAB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Published Apr 16, 2005
Detailed Description SML80A12 TO–3 Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.0...
Datasheet PDF File SML80A12 PDF File

SML80A12
SML80A12

Overview
SML80A12 TO–3 Package Outline.
Dimensions in mm (inches) 25.
15 (0.
99) 26.
67 (1.
05) 10.
67 (0.
42) 11.
18 (0.
44) 1.
52 (0.
06) 3.
43 (0.
135) 6.
35 (0.
25) 9.
15 (0.
36) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.
47 (0.
058) 1.
60 (0.
063) 1 2 3 (case) 3.
84 (0.
151) 4.
09 (0.
161) 7.
92 (0.
312) 12.
70 (0.
50) VDSS 800V 11.
5A ID(cont) RDS(on) 0.
650Ω • Faster Switching • Lower Leakage • TO–3 Hermetic Package 38.
61 (1.
52) 39.
12 (1.
54) 29.
9 (1.
177) 30.
4 (1.
197) Pin 1 – Gate 16.
64 (0.
655) 17.
15 (0.
675) Pin 2 – Source Case – Drain D 22.
23 (0.
875) max.
G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect, ...


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