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SML50A19

Seme LAB
Part Number SML50A19
Manufacturer Seme LAB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Published Apr 16, 2005
Detailed Description SML50A19 TO–3 Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.0...
Datasheet PDF File SML50A19 PDF File

SML50A19
SML50A19

Overview
SML50A19 TO–3 Package Outline.
Dimensions in mm (inches) 25.
15 (0.
99) 26.
67 (1.
05) 10.
67 (0.
42) 11.
18 (0.
44) 1.
52 (0.
06) 3.
43 (0.
135) 6.
35 (0.
25) 9.
15 (0.
36) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.
47 (0.
058) 1.
60 (0.
063) 1 2 3 (case) 3.
84 (0.
151) 4.
09 (0.
161) 7.
92 (0.
312) 12.
70 (0.
50) VDSS 500V 18.
5A ID(cont) RDS(on) 0.
240Ω • Faster Switching • Lower Leakage • TO–3 Hermetic Package 38.
61 (1.
52) 39.
12 (1.
54) 29.
9 (1.
177) 30.
4 (1.
197) Pin 1 – Gate 16.
64 (0.
655) 17.
15 (0.
675) Pin 2 – Source Case – Drain D 22.
23 (0.
875) max.
G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect, ...


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