TH560

SD1730 (TH560) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P OUT = 220 W PEP WITH 12 dB GAIN .500 4 LFL (M174) epoxy sealed ORDER CODE SD1730 BRANDING TH560 PIN CONNECTION DESCRIPTION The SD1730 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. The devices utlizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 70 35 4.0 16 320 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) September 7, 1994 Junction-Case Thermal Resistance 0.6 °C/W 1/6 SD1730 (TH560) ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCES BVCEO BVEBO I CEO ICES hFE DYNAMIC Symbol I C = 100 mA I C = 200 mA I E = 20 mA VCE = 30 V VCE = 35 V VCE = 5 V VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IE = 0 mA IC = 7 A 70 35 4.0 — — 15 — — — — — — — — — 5 5 60 V V V mA mA — Test Conditions Value Min . Typ. Max. Unit POUT PG* IMD* η c* COB f = 30 MHz POUT = 220 W PEP POUT = 220 W PEP POUT = 220 W PEP f = 1 MHz VCE = 28 V VCE = 28 V VCE = 28 V VCE = 28 V VCB = 28 V VCE = 28 V ICQ ...