TGF4124-EPU

TGF4124-EPU 24 mm Discrete HFET  4124 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm) TGF4124-EPU RF Performance at F = 2.3 GHz Vd = 8.0 V, Vg = -1.1 V, Iq = 2.17 A and T A = 25°C 50 Pout 48 46 PAE 50 45 40 35 30 25 20 15 10 5 20 22 24 26 28 30 32 55 44 42 40 38 36 34 32 30 Input Power (dBm) 1 TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com Power Added Efficiency % Output Power (dBm) TGF4124-EPU RF Performance for Vd = 7.0 V, F = 2.3 GHz, and TA = 25° C Quiescent Id is 2.24 A (Vg = -1.1 V), 1.81 A (Vg = -1.3 V), and 1.37 A (Vg = -1.5 V) 140 130 Predicted Channel Temp (°C) 120 110 100 90 Tch 80 70 60 50 40 55 50 Power Added Efficiency % 45 40 35 30 25 20 15 10 5 14 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 42 41 40 39 38 37 36 35 Pout Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 34 33 32 Output Power (dBm) 2 13 12 Gain (dB) 11 10 9 8 7 20 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 21 22 23 24 25 26 27 28 Input Power (dBm) 29 30 31 32 TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com TGF4124-EPU RF Performance for Vd = 8.0 V, F = 2.3 GHz, and TA = 25° C Quiescent Id is 2.17 A (Vg = -1.1 V), 1.80 A (Vg = -1.3 V), and 1.40 A (Vg = -1.5 V) 150 140 Predicted Channel Temp (°C) 130 120 110 100 90 80 70 60 50 55 50 Power Added Efficiency % 45 40 35 30 25 20 15 10 5 14 ...