TGF4118-EPU

TGF4118-EPU 18 mm Discrete HFET  4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm) TGF4118-EPU RF Performance at F = 2.3 GHz Vd = 8.0 V, Vg = -1.1 V, Iq = 1.69 A and T A = 25°C 50 Pout 48 46 PAE 50 45 44 42 40 38 36 25 34 32 30 20 22 24 26 28 30 32 20 15 40 35 30 55 Input Power (dBm) Power Added Efficiency % 1 TriQuint Semiconductor Texas Phone: 972 994-8465 Output Power (dBm) Fax 972 994-8504 Web: www.triquint.com TGF4118-EPU RF Performance for Vd = 7.0 V, F = 2.3 GHz, and TA = 25° C Quiescent Id is 1.74 A (Vg = -1.1 V), 1.37 A (Vg = -1.3 V), and 1.02 A (Vg = -1.5 V) 130 120 Predicted Channel Temp (°C) 110 100 90 80 Tch 70 60 Pout 50 40 30 60 55 Power Added Efficiency % 50 45 40 35 30 25 20 15 Vg = -1.1 V Vg = -1.3 V Vg = -1.5 V 42 41 40 39 38 37 36 35 Vg = -1.1 V Vg = -1.3 V Vg = -1.5 V 34 33 32 Output Power (dBm) 2 15 14 13 Gain (dB) 12 11 10 9 8 7 20 Vg = -1.1 V Vg = -1.3 V Vg = -1.5 V 21 22 23 24 25 26 27 Input Power (dBm) 28 29 30 31 TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com TGF4118-EPU RF Performance for Vd = 8.0 V, F = 2.3 GHz, and TA = 25° C Quiescent Id is 1.69 A (Vg = -1.1 V), 1.38 A (Vg = -1.3 V), and 1.06 A (Vg = -1.5 V) 140 130 Predicted Channel Temp (°C) 120 110 100 90 80 Pout 70 60 50 40 60 55 Power Added Efficiency % 50 45 40 35 30 25 20 15 15 Vg...