TGA1342-EPU

Advance Product Information 2 -20 GHz Wideband AGC Amplifier TGA1342-EPU Key Features and Performance 0.5 um MESFET Technology 9 dB Nominal Gain 3.5 dB NF Typical Midband 17.5 dBm Nominal Pout @ P1dB Bias 5-8V @ 60 mA Dimensions 3.378mm x 2.032mm Primary Applications Typical Electrical Characteristics S21 Gain (dB) VD=5v Id=60ma Temp=25C 12.0 Gain (dB) 10.0 8.0 6.0 4.0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) Input Return Loss (dB) 0.0 -10.0 -20.0 -30.0 -40.0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) S11 Input Return Loss (dB) VD=5v Id=60ma Temp=25C Wideband Gain Block Amplifier Wideband Low Noise Amplifier Noise Figure (dB) VD=6v Id=60ma Temp=25C Output Return Loss (dB) 6.0 5.0 4.0 3.0 2.0 1.0 2 4 6 8 10 12 14 16 18 Frequency (GHz) 0.0 -10.0 -20.0 -30.0 -40.0 2 S22 Output Return Loss (dB) VD=5v Id=60ma Temp=25C Noise Figure (dBf) 4 6 8 10 12 14 16 18 20 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 rev 11/10/98 Advance Product Information Mechanical Characteristics Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Se...