Ka Band Low Noise Amplifier
Advance Product Information
August 29, 2000
Ka Band Low Noise Amplifier
TGA1319A
Key Features and Performance
• • • • ...
Description
Advance Product Information
August 29, 2000
Ka Band Low Noise Amplifier
TGA1319A
Key Features and Performance
0.15um pHEMT Technology 21-27 GHz Frequency Range 2 dB Nominal Noise Figure 19 dB Nominal Gain 12 dBm Pout 3V, 45 mA
Chip Dimensions 1.985 mm x .980 mm
Primary Applications
Point-to-Point Radio Point-to-Multipoint Communications
0
Preliminary Data, 2 Fixtured samples @ 25C
3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 15 16 17 18 19 20 21 22 23 24 25 26 27
-4
-8
-12
-16
-20 15 16 17 18 19 20 21 22 23 24 25 26
Typical NF @ 25C
30 28 26 24 22 20 18 16 14 12 10 15 16 17 18 19 20 21 22 23 24 25 26
Typical S11 @ 25C
0
-5
-10
-15
-20 15 16 17 18 19 20 21 22 23 24 25 26
Typical Gain @ 25C
Typical S22 @ 25C
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
Advance Product Information
August 29, 2000
TGA1319A
Vd=3V
100 pF
100 pF
RFin
RFout
100 pF
100 pF
Vg1
Vg2
TGA1319A - Recommended Assembly Drawing
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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