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TG2006F

Toshiba Semiconductor
Part Number TG2006F
Manufacturer Toshiba Semiconductor
Description 1.9 GHz Band Power Amplifier
Published Apr 16, 2005
Detailed Description TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Teleco...
Datasheet PDF File TG2006F PDF File

TG2006F
TG2006F

Overview
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.
9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Features l Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V l Low current consumption: It = 130 mA (typ.
) l Small package: SM8 package (2.
9 × 2.
8 × 1.
1mm) l Low cost: Can be achieved minimum function.
Pin Assignment (top view) Marking TG2006F Weight: 0.
02 g (typ.
) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Supply voltage VDD1 VDD2 5 5 Gate voltage VGG 1 Input power Pi 10 Power dissipation Pd (Note1) 250 Operating temperature range Topr −40~85 Storage temperature range Tstg −55~150 Note 1: When mounted on 2.
5 cm2 × 1.
6 t gla...


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