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TF921 Dataheets PDF



Part Number TF921
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Fast Switching Thyristor
Datasheet TF921 DatasheetTF921 Datasheet (PDF)

TF921..H TF921..H Fast Switching Thyristor Advance Information Replaces June 1998 version, DS4280-3.0 DS4280-4.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 2500V IT(RMS) 1570A ITSM 13600A dV/dt 500V/µs dI/dt 500A/µs tq 120µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 2500 2400 2200 Co.

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TF921..H TF921..H Fast Switching Thyristor Advance Information Replaces June 1998 version, DS4280-3.0 DS4280-4.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 2500V IT(RMS) 1570A ITSM 13600A dV/dt 500V/µs dI/dt 500A/µs tq 120µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 2500 2400 2200 Conditions TF921 25H TF921 24H TF921 22H VRSM = VRRM + 100V IDRM = IRRM = 100mA at VRRM or VDRM & Tvj Lower voltage grades available. Outline type code: MU169. See Package Details for further information. CURRENT RATINGS Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 1000 1570 Units A A 1/5 TF921..H SURGE RATINGS Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; VR = 0% VRRM, Tj = 125˚C 10ms half sine; VR = 0% VRRM, Tj = 125˚C Max. 13.6 930 x 103 Units kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 23.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 22.3 125 150 24.6 o Min. dc Anode dc - Max. 0.02 0.006 0.012 135 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN MEASUREMENT OF RECOVERED CHARGE - QRA1 Measurement of QRA1 : QRA1 = IRR x tRR 2 ITM QRA1 tp = 1ms dIR/dt IRR 0.5x IRR 2/5 TF921..H DYNAMIC CHARACTERISTICS Symbol VTM IRRM/IDRM dV/dt Parameter Maximum on-state voltage Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At 1500A peak, Tcase = 25oC At VRRM/VDRM, Tcase = 125oC Linear to 60% VDRM Tj = 125oC, Gate open circuit Gate source 20V, 20Ω dI/dt Rate of rise of on-state current tr ≤ 0.5µs, Tj = 125˚C VT(TO) rT tgd t(ON)TOT IH IL tq QRR Threshold voltage On-state slope resistance Delay time Total turn-on time Holding current Latching current Turn-off time Reverse recovery charge At Tvj = 125oC At Tvj = 125oC Tj = 25˚C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 50A/µs, dIG/dt = 1A/µs Tj = 25oC, ITM = 1A, VD = 12V Tj = 25oC, IG = 0.5A, VD = 12V Tj = 125˚C, IT = 1380A, VR = 100V, dV/dt = 20V/µs to 0.6VDRM, dIR/dt = 50A/µs, tp = 1ms. tq code: H Non-repetitive 1.5* 3* 100* 300* 800 1.1 0.375 120 2200 Repetitive 50Hz Min. Max. 1.85 100 500 500 Units V mA V/µs A/µs A/µs V mΩ µs µs mA mA µs µC *Typical value. GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode Conditions VDRM = 12V, Tcase = 25oC, RL = 6Ω VDRM = 12V, Tcase = 25oC, RL = 6Ω At VDRM Tcase = 125oC, RL = 1kΩ Anode positive with respect to cathode Anode negative with respect to cathode Typ. Max. 3.0 250 0.25 30 0.25 5.0 10 50 3.0 Units V mA V V V V A W W 3/5 TF921..H PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.1 approx (one in each electrode) Cathode tab Ø74 max Ø46 min Ø1.5 Gate Ø46 min Ø68 max Cathode 26 ± 1 Anode Nominal weight: 500g Clamping force: 23.5kN ±10% Lead length: 250mm Package outine type code: MU169 ASSOCIATED PUBLICATIONS Title Calculating the junction temperature or power semiconductors Gate triggering and the use of gate characteristics Recommendations for clamping power semiconductors The effect of temperature on thyristor performance Thyristor and diode measurement with a multi-meter Turn-on performance of thyristors in parallel Use of V , r on-state characteristic TO T Application Note Number AN4506 AN4840 AN4839 AN4870 AN4853 AN4999 AN5001 4/5 TF921..H POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAM.


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