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TF91320C

Dynex Semiconductor

Fast Switching Thyristor

TF913..C TF913..C Fast Switching Thyristor Replaces March 1998 version, DS4278-2.2 DS4278-3.0 January 2000 APPLICATION...


Dynex Semiconductor

TF91320C

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Description
TF913..C TF913..C Fast Switching Thyristor Replaces March 1998 version, DS4278-2.2 DS4278-3.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 2000V IT(RMS) 1300A ITSM 17000A dV/dt 300V/µs dI/dt 500A/µs tq 50µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 2000 1800 1600 Conditions TF913 20C TF913 18C TF913 16C VRSM = VRRM + 100V IDRM = IRRM = 60mA at VRRM or VDRM & Tvj Lower voltage grades available. Outline type code: MU169. See Package Details for further information. CURRENT RATINGS Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 828 1300 Units A A 1/13 TF913..C SURGE RATINGS Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; VR = 0% VRRM, Tj = 125˚C 10ms half sine; VR = 0% VRRM, Tj = 125˚C Max. 17.0 1445 x 103 Units kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 23.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 22.3 125 150 24.6 o Min. dc Anode dc - Max. 0.020 0.006 0.012 125 U...




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