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TF70816B

Dynex Semiconductor

Fast Switching Thyristor

TF708..B TF708..B Fast Switching Thyristor Replaces March 1998 version, DS4276-2.2 DS4276-3.0 January 2000 APPLICATION...


Dynex Semiconductor

TF70816B

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TF708..B TF708..B Fast Switching Thyristor Replaces March 1998 version, DS4276-2.2 DS4276-3.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 2000V IT(RMS) 750A ITSM 8000A dV/dt 300V/µs dI/dt 500A/µs tq 40µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 2000 1800 1600 Conditions TF708 20B TF708 18B TF708 16B VRSM = VRRM + 100V IDRM = IRRM = 60mA at VRRM or VDRM & Tvj Lower voltage grades available. Outline type code: MU171. See Package Details for further information. CURRENT RATINGS Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 480 750 Units A A 1/13 TF708..B SURGE RATINGS Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; VR = 0% VRRM, Tj = 125˚C 10ms half sine; VR = 0% VRRM, Tj = 125˚C Max. 8.0 320 x 103 Units kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 15.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 14.25 125 150 15.75 o Min. dc Anode dc - Max. 0.04 0.072 0.096 0.01 0.02 ...




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