Document
TF666..A
TF666..A
Fast Switching Thyristor
Replaces March 1998 version, DS4274-2.2 DS4274-3.0 January 2000
APPLICATIONS
s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters
KEY PARAMETERS VDRM 1400V IT(RMS) 700A ITSM 9000A dV/dt 300V/µs dI/dt 500A/µs tq 20µs
FEATURES
s Double Side Cooling s High Surge Capability s High Voltage
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM 1400 1200 1000 800 600 Conditions
TF666 14A TF666 12A TF666 10A TF666 08A TF666 06A
VRSM = VRRM + 100V IDRM = IRRM = 35mA at VRRM or VDRM & Tvj Outline type code: MU171. See Package Details for further information.
Lower voltage grades available.
CURRENT RATINGS
Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 446 700 Units A A
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TF666..A
SURGE RATINGS
Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; VR = 0% VRRM, Tj = 125˚C 10ms half sine; VR = 0% VRRM, Tj = 125˚C Max. 9.0 405.0 x 103 Units kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 10.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 9.5 125 150 10.5
o
Min. dc Anode dc -
Max. 0.05 0.095 0.11 0.01 0.02 125
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR 2 ITM QRA1 tp = 1ms dIR/dt IRR
0.5x IRR
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DYNAMIC CHARACTERISTICS
Symbol VTM IRRM/IDRM dV/dt Parameter Maximum on-state voltage Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At 1500A peak, Tcase = 25oC At VRRM/VDRM, Tcase = 125oC Linear to 60% VDRM Tj = 125oC, Gate open circuit Gate source 20V, 20Ω dI/dt Rate of rise of on-state current tr ≤ 0.5µs, Tj = 125˚C VT(TO) rT tgd t(ON)TOT IH IL Threshold voltage On-state slope resistance Delay time Total turn-on time Holding current Latching current At Tvj = 125oC At Tvj = 125oC Tj = 25˚C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 50A/µs, dIG/dt = 1A/µs Tj = 25oC, ITM = 1A, VD = 12V Tj = 25oC, IG = 0.5A, VD = 12V Tj = 125˚C, IT = 250A, VR = 50V, tq code: A dV/dt = 20V/µs (Linear to 60% VDRM), dIR/dt = 50A/µs, Gate open circuit Non-repetitive 800 1.24 0.57 1.5* 3* 80* 500* 20 Repetitive 50Hz Min. Max. 2.1 35 300 500 Units V mA V/µs A/µs A/µs V mΩ µs µs mA mA µs
tq
Turn-off time
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power An.