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TF66606A Dataheets PDF



Part Number TF66606A
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Fast Switching Thyristor
Datasheet TF66606A DatasheetTF66606A Datasheet (PDF)

TF666..A TF666..A Fast Switching Thyristor Replaces March 1998 version, DS4274-2.2 DS4274-3.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 1400V IT(RMS) 700A ITSM 9000A dV/dt 300V/µs dI/dt 500A/µs tq 20µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 1400 1200 1000 800 600 Conditions TF66.

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TF666..A TF666..A Fast Switching Thyristor Replaces March 1998 version, DS4274-2.2 DS4274-3.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 1400V IT(RMS) 700A ITSM 9000A dV/dt 300V/µs dI/dt 500A/µs tq 20µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 1400 1200 1000 800 600 Conditions TF666 14A TF666 12A TF666 10A TF666 08A TF666 06A VRSM = VRRM + 100V IDRM = IRRM = 35mA at VRRM or VDRM & Tvj Outline type code: MU171. See Package Details for further information. Lower voltage grades available. CURRENT RATINGS Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 446 700 Units A A 1/13 TF666..A SURGE RATINGS Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; VR = 0% VRRM, Tj = 125˚C 10ms half sine; VR = 0% VRRM, Tj = 125˚C Max. 9.0 405.0 x 103 Units kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 10.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 9.5 125 150 10.5 o Min. dc Anode dc - Max. 0.05 0.095 0.11 0.01 0.02 125 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN MEASUREMENT OF RECOVERED CHARGE - QRA1 Measurement of QRA1 : QRA1 = IRR x tRR 2 ITM QRA1 tp = 1ms dIR/dt IRR 0.5x IRR 2/13 TF666..A DYNAMIC CHARACTERISTICS Symbol VTM IRRM/IDRM dV/dt Parameter Maximum on-state voltage Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At 1500A peak, Tcase = 25oC At VRRM/VDRM, Tcase = 125oC Linear to 60% VDRM Tj = 125oC, Gate open circuit Gate source 20V, 20Ω dI/dt Rate of rise of on-state current tr ≤ 0.5µs, Tj = 125˚C VT(TO) rT tgd t(ON)TOT IH IL Threshold voltage On-state slope resistance Delay time Total turn-on time Holding current Latching current At Tvj = 125oC At Tvj = 125oC Tj = 25˚C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 50A/µs, dIG/dt = 1A/µs Tj = 25oC, ITM = 1A, VD = 12V Tj = 25oC, IG = 0.5A, VD = 12V Tj = 125˚C, IT = 250A, VR = 50V, tq code: A dV/dt = 20V/µs (Linear to 60% VDRM), dIR/dt = 50A/µs, Gate open circuit Non-repetitive 800 1.24 0.57 1.5* 3* 80* 500* 20 Repetitive 50Hz Min. Max. 2.1 35 300 500 Units V mA V/µs A/µs A/µs V mΩ µs µs mA mA µs tq Turn-off time *Typical value. GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT IGT VGD VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power An.


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