Document
TO-220F 5A Thyristor
TF521S, TF541S, TF561S
s Features
qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=5A qGate trigger current: IGT=15mA max qIsolation voltage: VISO=1500V(50Hz Sine wave, RMS)
13.0 min
External Dimensions
(Unit: mm)
φ 3.3±0.2 8.4±0.2 4.0±0.2 10.0±0.2
4.2± 2.8
0.2
C 0.5
16.9±
0.3
0.8±0.2
a b
1.35±0.15 1.35±0.15 +0.2 0.85 – 0.1 +0.2 0.45 – 0.1 2.4±
3.9±
qUL approved type available
0.2
2.54 2.2±0.2
2.54
0.2
(1). Cathode (K) (2). Anode (A) (3). Gate (G)
a. Part Number b. Lot Number
(1) (2) (3)
Weight: Approx. 2.1g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak off-state voltage Non-repetitive peak reverse voltage Average on-state current RMS on-state current Surge on-state current Peak forward gate current Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage
Symbol
VDRM VRRM VDSM VRSM IT(AV) IT(RMS) ITSM IFGM VFGM VRGM PGM PG(AV) Tj Tstg VISO
Ratings
TF521S 200 200 300 300 TF541S 400 400 500 500 5.0 7.8 80 2.0 10 5.0 5.0 0.5 – 40 to +125 – 40 to +125 1500 TF561S 600 600 700 700
Unit
V V V V A A A A V V W W °C °C V
Conditions
Tj= –40 to +125°C, RGK =1kΩ
50Hz Half-cycle sinewave, Continuous current, Tc=87°C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C f f f 50Hz, duty 50Hz 50Hz, duty 10% 10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical Characteristics
Parameter
Off-state current Reverse current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance
Symbol
IDRM IRRM VTM VGT IGT VGD IH dv/dt tq Rth
Ratings
min typ max 2.0 2.0 1.4 1.5 3.0 0.1 4.0 50 30 4.0 15
Unit
mA mA V V mA V mA V/µS µS °C/W
Conditions
Tj=125°C, VD=VDRM(VRRM), RGK=1kΩ TC=25°C, ITM=10A VD=6V, RL=10Ω, TC=25°C VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ RGK=1kΩ, Tj=25°C VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ, CGK=0.033µF Tc=25°C Junction to case
12
TF521S, TF541S, TF561S
vT – iT Characteristics (max)
100 50
ITSM Ratings
100
Initial junction temperature Tj=125°C
I TSM
Gate Characteristics
Gate trigger voltage VGT (V)
14 12
Surge on-state current ITSM (A)
80
10 ms
1
iT (A)
vGF (V)
1 cycle
Tj =125°C
10 5
10 8
PG
0
On-state current
60
50Hz
0
10
Tj =25°C
20
Tj = –20°C
30
Gate voltage
Gate trigger current IGT (mA)
Tj = 25°C
40
6 4 2
20
1 0.5
See graph at the upper right
0 1 2 3
0 0.6 1.0 2.0 3.0 3.6 1 5 10 50 100
0
On-state voltage
vT ( V )
Number of cycle
Gate current
iGF (A)
IT(AV) – PT(AV) Characteristics
12
IT(AV) – Tc Ratings
150
50Hz Half-cycle sinewave θ : Conduction angle
Average on-state power PT(AV) (W)
50Hz Half-cycle sinewave θ : Conduction angle 180° θ 0°
DC
8 6
30 ° θ= 60 °
Case temperature TC (°C)
10
125
180° θ
0°
0° 18
0°
100
90 ° 12
75 θ=30° 120° 180° 60° 90° DC
4
50 25 0
2 0
0
2
4
6
8
10
0
2
4
6
8
10
Average on-state current IT(AV) (A)
Average on-state current IT(AV) (A)
Pulse trigger temperature Characteristics vgt (Typical)
2.0
Pulse trigger temperature Characteristics igt (Typical)
tw
gate trigger IGT DC current at 25°C
IH temperature Characteristics
(Typical)
igt tw
100 (VD=30V, RGK=1kΩ)
)
gate trigger VGT DC voltage at 25°C
)
vgt
30
(
1.5
–20°C
(
5
Tj =– 40°C –20°C 25°C
trigger voltage vgt ( Gate ) at Ta and tw
1.0
25°C 75°C 125°C
trigger current igt (Gate ) at Ta and tw
Holding current IH (mA)
Tj =– 40°C
10
50
1 0.5 75°C 125°C 0.2 0.5 1 10 100 1000
10
5 3 –40
0.5
0.5 1
10
100
1000
0
25
50
75
100
Pulse width
t w ( µs)
Pulse width
t w ( µs)
Junction temperature Tj (°C)
VGT temperature Characteristics
(Typical)
1.2 1.0 (VD=6V, RL=10Ω)
IGT temperature Characteristics
(Typical)
50 30 (VD=6V, RL=10Ω)
Transient thermal resistance Characteristics (Junction to case)
10
Gate trigger current IGT (mA)
Gate trigger voltage VGT (V)
0.8 0.6 0.4 0.2 0 –40
10
Transient thermal resistance
rth (°C/W)
1
5 3
0
25
50
75
100
125
1 –40
0.1 1 10
0
25
50
75
100
125
10 2
10 3
10 4
Junction temperature Tj (°C)
Junction temperature Tj (°C)
t, Time (ms)
Tj = –40°C
2
M
W =5
125
10 5
13
.