TEMD5100

Silicon PIN Photodiode TEMD5100 Vishay Semiconductors Description TEMD5100 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5 devices in many applications. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (λp = 950 nm). The large active area combined with a flat case gives a high sensitivity at a wide viewing angle. 12775 Features Large radiant sensitive area (A = 7.5 mm2) Wide angle of half sensitivity ϕ = ± 65 ° High photo sensitivity Fast response times Small junction capacitance Plastic case with IR filter (λ = 950 nm) Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications High speed photo detector Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse Voltage Power Dissipation Junction Temperature Tamb ≤ 25 °C Storage Temperature Range Soldering Temperature t≤3s Thermal Resistance Junction/ Ambient Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Breakdown Voltage IR = 100 µA, E = 0 Reverse Dark Current VR = 10 V, E = 0 Diode capacitance VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Symbol Value Unit VR 60 V PV 215 mW Tj 100 °C Tstg - 55 to + 100 °C Tsd 260 °C RthJA 350 K/W Symbol Min Typ. Max Unit V(BR)...