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INTEGRATED CIRCUITS
DATA SHEET
TDA8011T IF amplifier for satellite TV receivers
Product specification File under Integrated Circuits, IC02 February 1995
Philips Semiconductors
Philips Semiconductors
Product specification
IF amplifier for satellite TV receivers
FEATURES • High voltage gain, up to 860 MHz • Low noise • Large dynamic gain control • High impedance differential input stage • Low output impedance. APPLICATIONS • Second IF amplifier for satellite TV receivers. QUICK REFERENCE DATA SYMBOL VCC ICC Vi Vo Gv(max) Gv(min) PARAMETER supply voltage supply current input voltage level output voltage level maximum voltage gain minimum voltagegain VCC = 5 V; Tamb = 25 °C; IAGC = 0 mA CONDITIONS MIN. 4.5 27 − − 25 − TYP. 5.0 35 − − − − DESCRIPTION
TDA8011T
The TDA8011T is a broadband low-noise AGC amplifier which is used for the second IF amplifier in satellite TV receivers. The amplifier is powered from a single 5 V supply. The amplifier gain can be easily controlled over a large dynamic range by using a single ground reference voltage. The two outputs are 180° out of phase and are separately buffered. The two outputs can therefore, be used in either the differential or asymmetrical mode.
MAX. 5.5 45 96 85 − −21
UNIT V mA dBµV dBµV dB dB
ORDERING INFORMATION TYPE NUMBER TDA8011T PACKAGE NAME SO8 DESCRIPTION plastic small outline package; 8 leads; body width 3.9 mm VERSION SOT96-1
February 1995
2
Philips Semiconductors
Product specification
IF amplifier for satellite TV receivers
BLOCK DIAGRAM
TDA8011T
Fig.1 Block diagram.
PINNING SYMBOL VCC IFI1 IFI2 VCC IFO1 AGC GND IFO2 PIN 1 2 3 4 5 6 7 8 DESCRIPTION supply voltage IF input 1 IF input 2 supply voltage IF output 1 AGC input ground IF output 2 Fig.2 Pin configuration.
February 1995
3
Philips Semiconductors
Product specification
IF amplifier for satellite TV receivers
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC V(max) Isource(max) tsc(max) Tstg Tj Tamb supply voltage maximum voltage on all pins maximum output source current maximum short-circuit time on outputs storage temperature junction temperature operating ambient temperature PARAMETER −0.3 −0.3 − − −55 − −10 MIN. 6.0 VCC 10 10 +150 +150 +80 MAX.
TDA8011T
UNIT V V mA s °C °C °C
THERMAL CHARACTERISTICS SYMBOL Rth j-a HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe it is desirable to take normal precautions appropriate to handling MOS devices. CHARACTERISTICS VCC = 5 V; fi = 70, 480 and 610 MHz; Tamb = 25 °C; measured in application circuit of Fig.6; unless otherwise specified. SYMBOL Supply ICC IF amplifier Gv(max) Gv(min) ∆G Vi VI(DC) Vo VO(DC) F F(min) IM3 Ri(diff) Ci(diff) Ro(SE) maximum voltage gain minimum voltage gain tilt input voltage level DC input voltage level output voltage level DC output voltage level noise figure minimum noise figure third-order intermodulation distance differential input resi.