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TIP35C TIP36B/TIP36C
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS
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STMicroelectronic PREFERRED SALESTYPES
DESCRIP...
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TIP35C TIP36B/TIP36C
COMPLEMENTARY SILICON HIGH POWER
TRANSISTORS
s
STMicroelectronic PREFERRED SALESTYPES
DESCRIPTION The TIP35C is a silicon Epitaxial-Base
NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. The complementary
PNP type is TIP36C. Also TIP36B is a
PNP type.
3 2 1
TO-218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
NPN PNP V CBO V CEO VEBO IC ICM IB P tot Tstg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T case ≤ 25 C Storage Temperature
o
Value TIP35C TIP36B 80 80 5 25 50 5 125 -65 to 150 150 TIP36C 100 100
Unit
V V V A A A W
o o
C C
Max. Operating Junction Temperature
For
PNP types voltage and current values are negative.
October 1999
1/4
TIP35C / TIP36B / TIP36C
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEO IEBO I CES Parameter Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Collector Cut-off Current (V BE = 0) Test Conditions V CE = 60 V V EB = 5 V V CE = Rated V CEO I C = 30 mA for TIP36B for TIP35C/36C I C = 1.5 A I C = 15 A I C = 15 A I C = 25 A I C = 15 A I C = 25 A IC = 1 A IC = 1 A V CE = 10 V V CE = 10 V V CE = 4 V V CE = 4 V I B = 1.5 A IB = 5 A V CE = 4 V V CE = 4 V f = 1 MHz f = ...