TIP2955 PNP SILICON POWER TRANSISTOR
Copyright © 1997, Power Innovations Limited, UK JANUARY 1972 - REVISED MARCH 1997
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TIP2955
PNP SILICON POWER
TRANSISTOR
Copyright © 1997, Power Innovations Limited, UK JANUARY 1972 - REVISED MARCH 1997
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Designed for Complementary Use with the TIP3055 Series 90 W at 25°C Case Temperature
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SOT-93 PACKAGE (TOP VIEW) 1
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15 A Continuous Collector Current Customer-Specified Selections Available
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2
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3 Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) (see Note 1) Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. SYMBOL VCBO VCER V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TL VALUE -100 -70 -7 -15 -7 90 3.5 62.5 -65 to +150 -65 to +150 260 UNIT V V V A A W W mJ °C °C °C
This value applies when the base-emitter resistance RBE = 100 Ω. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the
transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -10 V.
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