TIP142

Darlington Complementary Silicon Power Transistors TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Designed for general−purpose amplifier and low frequency switching applications. Features High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V Collector−Emitter Sustaining Voltage − @ 30 mA VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145 = 80 Vdc (Min) − TIP141, TIP146 = 100 Vdc (Min) − TIP142, TIP147 Monolithic Construction with Built−In Base−Emitter Shunt Resistor These are Pb−Free Devices* www.onsemi.com 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−100 VOLTS, 125 WATTS MAXIMUM RATINGS Rating TIP140 TIP141 TIP142 Symbol TIP145 TIP146 TIP147 Unit Collector − Emitter Voltage VCEO 60 Collector − Base Voltage VCB 60 Emitter − Base Voltage VEB Collector Current IC − Continuous − Peak (Note 1) 80 100 Vdc 80 100 Vdc 5.0 Vdc Adc 10 15 Base Current − Continuous IB 0.5 Adc Total Power Dissipation PD @ TC = 25_C 125 W Operating and Storage TJ, Tstg −65 to +150 _C Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, RqJC 1.0 Junction−to−Case Unit °C/W Thermal Resistance, Junction−to−Ambient RqJA 35.7 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. 5 ms, v 10% Duty Cycle. SOT−93 (T...