Document
TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor
November 2014
TIP125 / TIP126 / TIP127 PNP Epitaxial Darlington Transistor
Features
• Medium Power Linear Switching Applications • Complementary to TIP120 / TIP121 / TIP122
Equivalent Circuit C
B
Ordering Information
1 TO-220 1.Base 2.Collector 3.Emitter
R1
≅Ω ≅Ω
R2 E
Part Number TIP125
TIP125TU TIP126
TIP126TU TIP127
TIP127TU
Top Mark TIP125 TIP125 TIP126 TIP126 TIP127 TIP127
Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge)
Packing Method Bulk Rail Bulk Rail Bulk Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
TIP125
-60
VCBO Collector-Base Voltage
TIP126 TIP127
-80 -100
V
TIP125
-60
VCEO Collector-Emitter Voltage
TIP126 TIP127
-80 -100
V
VEBO IC ICP IB TJ
TSTG
Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Junction Temperature Storage Temperature Range
-5 -5 -8 -120 150 -65 to 150
V A A mA °C °C
© 2001 Fairchild Semiconductor Corporation TIP125 / TIP126 / TIP127 Rev. 1.1.0
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www.fairchildsemi.com
TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol PC
Parameter Collector Dissipation (TA = 25°C) Collector Dissipation (TC = 25°C)
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol VCEO(sus)
ICEO
ICBO IEBO
Parameter
TIP125
Collector-Emitter Sustaining Voltage
TIP126
TIP127
TIP125
Collector Cut-Off Current TIP126
TIP127
TIP125
Collector Cut-Off Current TIP126
TIP127
Emitter Cut-Off Current
hFE DC Current Gain(1)
VCE(sat) VBE(on)
Cob
Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) Output Capacitance
Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Conditions
IC = -100 mA, IB = 0
VCE = -30 V, IB = 0 VCE = -40 V, IB = 0 VCE = -50 V, IB = 0 VCB = -60 V, IE = 0 VCB = -80 V, IE = 0 VCB = -100 V, IE = 0 VEB = -5 V, IC = 0 VCE = -3 V, IC = -0.5 A VCE = -3 V, IC = -3 A IC = -3 A, IB = -12 mA IC = -5 A, IB = -20 mA VCE = -3 V, IC = -3 A VCB = -10 V, IE = 0, f = 0.1 MHz
Value 2 65
Unit W
Min. -60 -80 -100
1000 1000
Max.
-2 -2 -2 -1 -1 -1 -2
-2 -4 -2.5 300
Unit V
mA
mA mA
V V pF
© 2001 Fairchild Semiconductor Corporation TIP125 / TIP126 / TIP127 Rev. 1.1.0
2
www.fairchildsemi.com
TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor
100μs500μ1sms 5ms DC
Typical Performance Characteristics
10k
V = -4V CE
1k
h , DC CURRENT GAIN FE
Cob[pF] Cib[pF], CAPACITANCE
100 -0.1
-1
I [A], COLLECTOR CURRENT
C
Figure 1. DC Current Gain
-10
1000
f = 0.1MHz
100 Cib Cob
10 -0.1 -1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE VEB[V], EMITTER-BASE VOLTAGE
Figure 3. Output and Input Capacitance vs. Reverse Voltage
90
75
60
45
30
15
0 0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
PC[W], POWER DISSIPATION
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-3.5 IC = 250IB
-3.0
-2.5
-2.0 -1.5 VBE(sat)
-1.0 VCE(sat)
-0.5 -0.1
-1
IC[A], COLLECTOR CURRENT
-10
Figure 2. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage
-10
IC[A], COLLECTOR CURRENT
-1
-0.1
-0.01 -1
TIP125 TIP126 TIP127
-10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
© 2001 Fairchild Semiconductor Corporation TIP125 / TIP126 / TIP127 Rev. 1.1.0
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www.fairchildsemi.com
TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor
Physical Dimensions
Figure 6. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© 2001 Fairchild Semiconductor Corporation TIP125 / TIP126 / TIP127 Rev. 1.1.0
4
www.fairchildsemi.com
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