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TIP125 Dataheets PDF



Part Number TIP125
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Epitaxial Darlington Transistor
Datasheet TIP125 DatasheetTIP125 Datasheet (PDF)

TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor November 2014 TIP125 / TIP126 / TIP127 PNP Epitaxial Darlington Transistor Features • Medium Power Linear Switching Applications • Complementary to TIP120 / TIP121 / TIP122 Equivalent Circuit C B Ordering Information 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Part Number TIP125 TIP125TU TIP126 TIP126TU TIP127 TIP127TU Top Mark TIP125 TIP125 TIP126 TIP126 TIP127 TIP127 Package TO-220 3L (Single Gauge) TO-220 3L (Sin.

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TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor November 2014 TIP125 / TIP126 / TIP127 PNP Epitaxial Darlington Transistor Features • Medium Power Linear Switching Applications • Complementary to TIP120 / TIP121 / TIP122 Equivalent Circuit C B Ordering Information 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Part Number TIP125 TIP125TU TIP126 TIP126TU TIP127 TIP127TU Top Mark TIP125 TIP125 TIP126 TIP126 TIP127 TIP127 Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Rail Bulk Rail Bulk Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value Unit TIP125 -60 VCBO Collector-Base Voltage TIP126 TIP127 -80 -100 V TIP125 -60 VCEO Collector-Emitter Voltage TIP126 TIP127 -80 -100 V VEBO IC ICP IB TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Junction Temperature Storage Temperature Range -5 -5 -8 -120 150 -65 to 150 V A A mA °C °C © 2001 Fairchild Semiconductor Corporation TIP125 / TIP126 / TIP127 Rev. 1.1.0 1 www.fairchildsemi.com TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor Thermal Characteristics Values are at TC = 25°C unless otherwise noted. Symbol PC Parameter Collector Dissipation (TA = 25°C) Collector Dissipation (TC = 25°C) Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol VCEO(sus) ICEO ICBO IEBO Parameter TIP125 Collector-Emitter Sustaining Voltage TIP126 TIP127 TIP125 Collector Cut-Off Current TIP126 TIP127 TIP125 Collector Cut-Off Current TIP126 TIP127 Emitter Cut-Off Current hFE DC Current Gain(1) VCE(sat) VBE(on) Cob Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) Output Capacitance Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%. Conditions IC = -100 mA, IB = 0 VCE = -30 V, IB = 0 VCE = -40 V, IB = 0 VCE = -50 V, IB = 0 VCB = -60 V, IE = 0 VCB = -80 V, IE = 0 VCB = -100 V, IE = 0 VEB = -5 V, IC = 0 VCE = -3 V, IC = -0.5 A VCE = -3 V, IC = -3 A IC = -3 A, IB = -12 mA IC = -5 A, IB = -20 mA VCE = -3 V, IC = -3 A VCB = -10 V, IE = 0, f = 0.1 MHz Value 2 65 Unit W Min. -60 -80 -100 1000 1000 Max. -2 -2 -2 -1 -1 -1 -2 -2 -4 -2.5 300 Unit V mA mA mA V V pF © 2001 Fairchild Semiconductor Corporation TIP125 / TIP126 / TIP127 Rev. 1.1.0 2 www.fairchildsemi.com TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor 100μs500μ1sms 5ms DC Typical Performance Characteristics 10k V = -4V CE 1k h , DC CURRENT GAIN FE Cob[pF] Cib[pF], CAPACITANCE 100 -0.1 -1 I [A], COLLECTOR CURRENT C Figure 1. DC Current Gain -10 1000 f = 0.1MHz 100 Cib Cob 10 -0.1 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE VEB[V], EMITTER-BASE VOLTAGE Figure 3. Output and Input Capacitance vs. Reverse Voltage 90 75 60 45 30 15 0 0 25 50 75 100 125 150 175 TC[oC], CASE TEMPERATURE Figure 5. Power Derating PC[W], POWER DISSIPATION VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -3.5 IC = 250IB -3.0 -2.5 -2.0 -1.5 VBE(sat) -1.0 VCE(sat) -0.5 -0.1 -1 IC[A], COLLECTOR CURRENT -10 Figure 2. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage -10 IC[A], COLLECTOR CURRENT -1 -0.1 -0.01 -1 TIP125 TIP126 TIP127 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 4. Safe Operating Area © 2001 Fairchild Semiconductor Corporation TIP125 / TIP126 / TIP127 Rev. 1.1.0 3 www.fairchildsemi.com TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor Physical Dimensions Figure 6. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB © 2001 Fairchild Semiconductor Corporation TIP125 / TIP126 / TIP127 Rev. 1.1.0 4 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower¥ Awinda® AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FPS¥ F-PFS¥ FRFET® Global Power ResourceSM GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT¥ OPTOLOGIC® OPTOPLANAR® ® PowerTrench® PowerXS™ Programmable Acti.


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