TIP110

TIP110 / TIP111 / TIP112 — NPN Epitaxial Silicon Darlington Transistor November 2014 TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor Features Monolithic Construction with Built-in Base-Emitter Shunt Resistors Complementary to TIP115 / TIP116 / TIP117 High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 1 A (Minimum) Low Collector-Emitter Saturation Voltage Industrial Use Ordering Information Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Part Number TIP110 TIP110TU TIP111TU TIP112 TIP112TU Top Mark TIP110 TIP110 TIP111 TIP112 TIP112 Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Rail Rail Bulk Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value Unit TIP110 60 VCBO Collector-Base Voltage TIP111 TIP112 80 100 V TIP110 60 VCEO Collector-Emitter Voltage TIP111 TIP112 80 100 V VEBO IC ICP IB TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Curren...