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TIP102

NPN Epitaxial Silicon Darlington Transistor

Description

TIP102 — NPN Epitaxial Silicon Darlington Transistor December 2014 TIP102 NPN Epitaxial Silicon Darlington Transistor Features Monolithic Construction with Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial...

Fairchild Semiconductor

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