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TIP100 Dataheets PDF



Part Number TIP100
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description NPN SILICON POWER DARLINGTONS
Datasheet TIP100 DatasheetTIP100 Datasheet (PDF)

TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with TIP105, TIP106 and TIP107 80 W at 25°C Case Temperature 8 A Continuous Collector Current Maximum VCE(sat) of 2.5 V at IC = 8 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIP10.

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TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with TIP105, TIP106 and TIP107 80 W at 25°C Case Temperature 8 A Continuous Collector Current Maximum VCE(sat) of 2.5 V at IC = 8 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIP100 Collector-base voltage (IE = 0) TIP101 TIP102 TIP100 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. TIP101 TIP102 V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE 60 80 100 60 80 100 5 8 15 1 80 2 10 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, R BE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER V (BR)CEO Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage IC = 30 mA (see Note 5) VCE = 30 V V CE = 40 V V CE = 50 V VCB = 60 V V CB = 80 V V CB = 100 V VEB = VCE = V CE = IB = 5V 4V 4V 6 mA IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = 3 A IC = 8 A IC = 3 A IC = 8 A IC = 8 A IB = 0 (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 1000 200 2 2.5 2.8 3.5 V V V TEST CONDITIONS TIP100 IB = 0 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 MIN 60 80 100 50 50 50 50 50 50 8 20000 mA µA µA V TYP MAX UNIT ICEO ICBO IEBO hFE VCE(sat) VBE VEC IB = 80 mA VCE = IE = 4V 8A NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC RθJA Cθ C Junction to case thermal resistance Junction to free air thermal resistance Thermal capacitance of case 0.9 MIN TYP MAX 1.56 62.5 UNIT °C/W °C/W J/°C resistive-load-switching characteristics at 25°C case temperature PARAMETER td tr ts tf † TEST CONDITIONS IC = 8 A V BE(off) = -5 V IB(on) = 80 mA RL = 5 Ω † MIN IB(off) = -80 mA tp = 20 µs, dc ≤ 2% TYP 35 350 1.8 2.45 MAX UNIT ns ns µs µs Delay time Rise time Storage time Fall time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 50000 TCS130AA COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 TCS130AB hFE - Typical DC Current Gain TC = -40°C TC = 25°C TC = 100°C 10000 1·5 1000 1·0 VCE = 4 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 IC - Collector Current - A 10 TC = -40°C TC = 25°C TC = 100°C 0·5 0·5 1·0 IC - Collector Current - A 10 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 3·0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40°C TC = 25°C TC = 100°C TCS130AC 2·5 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 IC - Collector Current - A 10 Figure 3. PRODUCT INFORMATION 3 TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAS130AA IC - Collector Current - A 10 tp = 100 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 5 ms, d = 0.1 = 10% DC Operation 1·0 TIP100 TIP101 TIP102 0·1 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 Ptot - Maximum .


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