TIM7785-16UL

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-16UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 3.6A f = 7.7 to 8.5GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 31.5dBm, ∆f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 68  MIN. 41.5 7.5    -44   TYP. MAX. 42.5  8.5  4.4 5.0  ±0.6 35  -47  4.4 5.0  80 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 6.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V Gate-Source Breakdown Voltage Thermal Resistance VGSO Rth(c-c) IGS= -200A Channel to Case UNIT MIN. TYP. MAX. S  3.6  V -1.0 -2.5 -4.0 A  10.5  V -5   °C/W  1.5 1.8  The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any o...