FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 41.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN
G1dB= 9.5dB at 6.4GHz to 7.2GHz ･LOW INTERMODULATION DISTORTION
IM3= -47dBc at Pout= 30.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM6472-12UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at ...
