TICP107

TICP107 SERIES SILICON CONTROLLED RECTIFIERS Copyright © 2000, Power Innovations Limited, UK JANUARY 1999 - REVISED JUNE 2000 G G G G G G G 1 A Continuous On-State Current 15 A Surge-Current Glass Passivated Wafer 400 V to 600 V Off-State Voltage IGT 50 µA min, 200 µA max di/dt 100A/µs Package Options PACKAGE LP LP with fomed leads PACKING Bulk Tape and Reel PART # SUFFIX (None) R LP PACKAGE (TOP VIEW) G A K 1 2 3 MDC1AA LP PACKAGE WITH FORMED LEADS (TOP VIEW) G A K MDC1AB 1 2 3 absolute maximum ratings over operating junction temperature (unless otherwise noted) RATING Repetitive peak off-state voltage (see Note 1) Repetitive peak reverse voltage Continuous on-state current at (or below) 25°C ambient temperature (see Note 2) Surge on-state current at (or below) 25°C ambient temperature (see Note 3) Critical rate of rise of on-state current at 110°C (see Note 4) Peak positive gate current (pulse width ≤ 300 µs) Junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds TICP107D TICP107M TICP107D TICP107M SYMBOL VDRM VRRM IT(RMS) ITSM di/dt IGM TJ Tstg TL VALUE 400 600 400 600 1 15 100 0.2 -40 to +110 -40 to +125 230 UNIT V V A A A/µs A °C °C °C NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operation with resistive load. 3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and ...