TIC256N

TIC256 SERIES SILICON TRIACS Copyright © 1997, Power Innovations Limited, UK JULY 1991 - REVISED MARCH 1997 q q q q q q High Current Triacs 20 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage 150 A Peak Current Max IGT of 50 mA (Quadrants 1 - 3) Pin 2 is in electrical contact with the mounting base. MDC2ACA TO-220 PACKAGE (TOP VIEW) MT1 MT2 G 1 2 3 absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC256D Repetitive peak off-state voltage (see Note 1) TIC256M TIC256S TIC256N Full-cycle RMS on-state current at (or below) 60°C case temperature (see Note 2) Peak on-state surge current full-sine-wave (see Note 3) Peak gate current Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) ITSM IGM TC Tstg TL VDRM SYMBOL VALUE 400 600 700 800 20 150 ±1 -40 to +110 -40 to +125 230 A A A °C °C °C V UNIT NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60°C derate linearly to 110°C case temperature at the rate of 500 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. electrical characteristics at 25°C case temperature (unless otherw...