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THDT58S1 Dataheets PDF



Part Number THDT58S1
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
Datasheet THDT58S1 DatasheetTHDT58S1 Datasheet (PDF)

THDT58S1 THDT58S Application Specific Discretes A.S.D.™ FEATURES CROWBAR PROTECTION DUAL ASYMMETRICAL TRANSIENT SUPPRESSOR PEAK PULSE CURRENT : - IPP = 75 A, 10/1000 µs for THDT58S. - IPP = 35 A, 10/1000 µs for THDT58S1. HOLDING CURRENT = 150 mA min BREAKDOWN VOLTAGE = 58 V. BREAKOVER VOLTAGE = 80V max SIP 3 TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION DESCRIPTION This device has been especially designed to protect subscriber line card interfaces (SLIC) against transient overvoltages. Its .

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THDT58S1 THDT58S Application Specific Discretes A.S.D.™ FEATURES CROWBAR PROTECTION DUAL ASYMMETRICAL TRANSIENT SUPPRESSOR PEAK PULSE CURRENT : - IPP = 75 A, 10/1000 µs for THDT58S. - IPP = 35 A, 10/1000 µs for THDT58S1. HOLDING CURRENT = 150 mA min BREAKDOWN VOLTAGE = 58 V. BREAKOVER VOLTAGE = 80V max SIP 3 TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION DESCRIPTION This device has been especially designed to protect subscriber line card interfaces (SLIC) against transient overvoltages. Its ion-implanted technology confers its excellent electrical characteristics. This is why this device easily fulfils the main protection standards which are related to the overvoltages suppression on telecom lines. The product pinout is compatible with TO202 and TO220 packages. COMPLIESWITHTHE FOLLOWING STANDARDS : CCITT K20 : VDE 0433 : VDE 0878 : CNET I3124: BELLCORE TR-NWT-001089 : (*) with series resistors or PTC. SCHEMATIC DIAGRAM NC Tip GND Ring 1 2 3 4 10/700 µs 5/310 µs 10/700 µs 5/200 µs 1.2/50 µs 1/20 µs 0.5/700 µs 0.2/310µs 10/1000µs 10/1000µs 1kV 25A 2kV 45/50A(*) 1.5kV 40A 1kV 25A 1kV 35/75A (*) TM: ASD is trademarks of SGS-THOMSON Microelectronics. February 1998 - Ed: 3 1/7 THDT58S / THDT58S1 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol IPP Parameter Peak pulse current (see note 1) 10/1000 µs 8/20 µs 2/10 µs t = 20 ms 67% VBR -55 to +150 +150 260 THDT58S1 35 70 80 20 THDT58S 75 150 30 5 -40 to +150 +150 260 Unit A ITSM dV/dt Tstg Tj TL Non repetitive surge peak on-state current (F = 50Hz) Critical rate of rise of off-state voltage A kV/µs °C °C °C Storage temperature range Maximum operating junction temperature Maximum lead temperature for soldering during 10s Note 1 : Pulse waveform : 10/1000µs tr =10µs 5/310µs tr =5µs 2/10µs tr =2µs tp=1000µs tp=310µs tp=10µs % I PP 100 50 0 tr tp t THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 80 Unit °C/W 2/7 THDT58S / THDT58S1 ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM IRM VBR VBO IH VF IBO IPP C Parameter Stand-offvoltage Leakage current at VRM Breakdown voltage Breakover voltage Holding current Forward Voltage drop Breakover current Peak pulse current Capacitance Ipp IH IBO VBO VBR VRM IRM VF V I IF 1 - PARAMETER RELATED TO THE DIODE LINE/GND Symbol VF IF = 5 A Test conditions tp = 500 µs Value 5 Unit V 2 - PARAMETERS RELATED TO THE PROTECTION THYRISTOR Type IRM @ VRM max. µA V VBR @ IR min. V mA VBO @ IBO max. V IH min. note 2 mA C max. note 3 pF min. note1 mA max. mA THDT58S THDT58S1 Note 1 : Note 2 : Note 3 : 10 10 56 56 58 58 1 1 80 80 150 50 800 800 150 150 400 200 See the reference test circuit 1 for IBO and VBO parameters. See test circuit 2. VR = 1V, F = 1MHz. 3/7 THDT58S / THDT58S1 REFERENCE TEST CIRCUIT 1 : t TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - V OUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 2 R D.U.T. - VP V BAT = - 48 V Surge generator This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back off-state within 50 ms max. 4/7 THDT58S / THDT58S1 Fig. 1: Relative variation of holding current junction temperature. Fig. 2: Capacitance versus reverse applied voltage (typical values). 1.0 0.0 Fig. 3: Peak on state voltage versus peak on state current (typical values). Fig. 4: Peak forward voltage drop versus peak forward current (typical values). 2.0 1.0 Fig. 5: Surge peak current versus overload duration (THDT58S). ITSM(A) 40 F=50Hz Tj initial=25 °C Fig. 6: Surge peak current versus overload duration (THDT58S1). ITSM(A) 30 F=50Hz Tj initial=25 °C 25 20 30 20 15 10 10 5 t(s) 0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0 1E-2 1E-1 t(s) 1E+0 1E+1 1E+2 1E+3 5/7 THDT58S / THDT58S1 APPLICATION CIRCUIT Typical SLIC protection concept RING GENERATOR -V bat LINE A T E S T R E L A Y S LINE B PTC TIP RING RELAY SLIC RING THBTXXX PTC THDT58S THDT58S1 FUNCTIONAL DESCRIPTION Line A Tip Line A Protection = - For positive Surges versus GND, the diode D1 will conduct - For negative Surges versus GND, the Protection device P1 will trigger at a maximum voltage equal to the VBO. Line B Protection = - For Surges on line B, the operatingmode is the same, D2 or P2 is activated. D1 P1 D2 P2 Line B Ring 6/7 THDT58S / THDT58S1 ORDER CODE THDT 58 S 1 35A VERSION ASYMETRICAL TRISIL Package : S = SIP3 BREAKDOWN VOLTAGE MARKING Type THDT58S THDT58S1 Marking THDT58S THDT58S1 PACKAGE MECHANICAL DATA. SIP 3 Plastic B REF. A I A DIMENSIONS Millimetres Inches Min. Typ. Max. Min. 7.10 2.80 1.50 .


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