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TPP25011

STMicroelectronics

OVERVOLTAGE and OVERCURRENT PROTECTION

TPP25011 Application Specific Discretes A.S.D.™ FEATURES UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 25...


STMicroelectronics

TPP25011

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Description
TPP25011 Application Specific Discretes A.S.D.™ FEATURES UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V PROGRAMMABLE CURRENT LIMITATION FROM 40 mA TO 500 mA SURGE CURRENT CAPABILITY IPP = 30A 10/1000 µs DESCRIPTION Dedicated to sensitive telecom equipment protection, this device can provide both voltage and current triggered protection with a very tight tolerance. The breakdown voltage can be easily programmed by using an external zener diode. A multiple protection mode can be also performed when using several zener diodes, providing to each line interface an optimized protection level. The current limiting function is achieved with the use of a resistorbetween the gate and the cathode. The value of the resistor will determine the level of the desired current. COMPLIESWITHTHE FOLLOWINGSTANDARDS : CCITT K17 : VDE 0433 : CNET : FCC part 68 : BELLCORE TR-NWT-000974 : (*) with series resistors or PTC. OVERVOLTAGE and OVERCURRENT PROTECTION for TELECOM LINE SO8 SCHEMATIC DIAGRAM 10/700 5/310 10/700 5/310 0.5/700 0.2/310 2/10 2/10 µs µs µs µs µs µs µs µs 1.5 38 2k 40 1.5 38 2.5 75 kV A V A (*) kV A kV A (*) 10/1000 µs 10/1000 µs 1 kV 30 A (*) TM: ASD is trademarks of SGS-THOMSON Microelectronics. February 1998 - Ed: 4 1/7 TPP25011 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C) Symbol IPP Parameter Peak pulse current (see note 1) 10/1000µs 5/310µs 2/10µs tp = 10ms t = 1s Value 30 40 75 5 3.5 - 55 to + 150 150 Unit A ITSM Tstg Tj Non repetitive surge peak ...




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