TSHA520.
Vishay Telefunken
GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1¾) Package
Description
The TSHA520. series are...
TSHA520.
Vishay Telefunken
GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1¾) Package
Description
The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement.
94 8390
Features
D D D D D D D
Extra high radiant power and radiant intensity Suitable for high pulse current operation Standard T–1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 12° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors
Applications
Infrared remote control and free air transmission systems with high power and long transmission distance requirements in combination with PIN photodiodes or photo
transistors. Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 2.5 210 100 –55...+100 –55...+100 260 350 Unit V mA mA A mW °C °C °C °C K/W
tp/T = 0.5, tp = 100 ms tp = 100 ms
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