U308

U/J/SST308 SERIES Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation (J/SST) Continuous Power Dissipation (U) Maximum Currents Gate Current (J/SST) Gate Current (U) Maximum Voltages Gate to Drain Gate to Source -25V -25V 10mA 20mA 350mW 500mW D S SINGLE N-CHANNEL HIGH FREQUENCY JFET Gpg = 11.5dB NF = 2.7dB TO-18 BOTTOM VIEW D 2 3 J SERIES TO-92 BOTTOM VIEW D S G G -55 to 150°C -55 to 135°C S 1 1 2 3 SST SERIES SOT-23 TOP VIEW 1 3 2 G COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL BVGSS VGS(F) IG rDS(on) en NF Gpg gfg gog CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Forward Voltage Gate Operating Current Drain to Source On Resistance Equivalent Noise Voltage Noise Figure Power Gain 2 MIN -25 0.7 TYP MAX 1 UNIT V pA Ω nV/√Hz CONDITIONS IG = -1µA, VDS = 0V IG = 10mA, VDS = 0V VDG = 9V, ID = 10mA VGS = 0V, ID = 1mA VDS = 10V, ID = 10mA, f = 100Hz -15 35 6 f = 105MHz f = 450MHz f = 105MHz f = 450MHz f = 105MHz f = 450MHz f = 105MHz f = 450MHz 1.5 2.7 16 11.5 14 13 0.16 0.55 dB VDS = 10V, ID = 10mA mS Forward Transconductance Output Conductance Linear Integrated Systems 4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 3...