2 MEGABIT 262/144 x 8 BIT 5 VOLT CMOS FLASH MEMORY
MOSEL VITELIC
V29C51002T/V29C51002B 2 MEGABIT (262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMORY
Description
PRELIMINARY
Feat...
Description
MOSEL VITELIC
V29C51002T/V29C51002B 2 MEGABIT (262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMORY
Description
PRELIMINARY
Features
s s s s s s 256Kx8-bit Organization Address Access Time: 55, 90 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100µA (Max) Hardware Data Protection Low VCC Program Inhibit Below 3.5V Self-timed write/erase operations with end-of-cycle detection – DATA Polling – Toggle Bit CMOS and TTL Interface Available in two versions – V29C51002T (Top Boot Block) – V29C51002B (Bottom Boot Block) Packages: – 32-pin Plastic DIP – 32-pin TSOP-I – 32-pin PLCC
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The V29C51002T/V29C51002B is a high speed 262,144 x 8 bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention. The V29C51002T/V29C51002B offers a combination of: Boot Block with Sector Erase/Write Mode. The end of write/erase cycle is detected by DATA Polling of I/O7 or by the Toggle Bit I/O6. The V29C51002T/V29C51002B features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. Th...
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