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VR4N

Toshiba Semiconductor

TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications (fast recov...


Toshiba Semiconductor

VR4N

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TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications (fast recovery) Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) Reverse Recovery Time: trr = 20 µs Plastic Mold Type. · · · · Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage TVR4J TVR4N Symbol VRRM IF (AV) IFSM Tj Tstg Rating 600 1000 1.2 100 (50 Hz) -40 to 150 -40 to 150 Unit V A A °C °C Average forward current (Ta = 55°C ) Peak one cycle surge forward current (non repetitive) Junction temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 3-4B1A Electrical Characteristics (Ta = 25°C) Characteristics Peak forward voltage Repetitive peak reverse current Reverse recovery time Thermal resistance (junction to ambient) Symbol VFM IRRM trr Rth (j-a) IFM = 5 A VRRM = Rated IF = 20 mA, IR = 1 mA DC Test Condition Weight: 0.47 g (typ.) Min ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ Max 1.2 10 20 80 Unit V mA ms °C/W Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part. Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire. Marking Type Code Lot No. Code VR 4J Month (starting from alphabet A) Year (last number of the christian era) Cathode Mark Color: Silver VR4J VR4N Type TVR4J TVR4N 1 2002-09-18 TVR4J,TVR4N iF – vF 30 rth (j-a) – t Ta = 25°C 100 (A) 10 5 3 150 Tj = 25°C Instantaneous forward current Transient thermal ...




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