ZHCS500

SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” ISSUE 1- September 1997 FEATURES: Low V F High Current Capability APPLICATIONS: DC - DC converters Mobile telecomms PCMCIA PARTMARK DETAIL: ZS5 7 1 ZHCS500 C 1 A 3 2 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current (Continuous) Forward Voltage @ IF = 500mA Average Peak Forward Current; D.C. = 50% Non Repetitive Forward Current t ≤100 µs t≤10ms Power Dissipation at Tamb= 25° C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 40 500 550 1000 6.75 3 330 -55 to + 150 125 UNIT V mA mV mA A A mW °C °C ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V (BR)R VF MIN. 40 TYP. 60 270 300 370 465 550 640 810 440 15 20 10 300 350 460 550 670 780 1050 40 MAX. UNIT V mV mV mV mV mV mV mV mV µA pF ns CONDITIONS. IR= 200 µA IF= IF= IF= IF= IF= IF= IF= IF= 50mA* 100mA* 250mA* 500mA* 750mA* 1000mA* 1500mA* 500mA, Tamb= 100° C* Reverse Current Diode Capacitance Reverse Recovery Time IR CD trr V R= 30V f= 1MHz,V R= 25V switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed conditions. Pulse width= 300 µs; duty cycle ≤2% . ZHCS500 TYPICAL CHARACTERISTICS 1 100m IF - Forward Current (A) IR - Reverse Current (A) 10m 1m +125°C +100°C 100m 100u 10u +50°C +25°C 10m +125°C +25°C -55°C 1u 100n 10n 1n -55°C 1m 0 0.1 0.2 0...