ZHCS400

SOD323 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” ISSUE 1- NOVEMBER 1998 FEATURES: Low VF High Current Capability Miniature Surface Mount Package 7 ZHCS400 C APPLICATIONS: DC - DC converters Mobile telecomms PCMCIA SOD323 A Partmark Detail - BD ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current (Continuous) Forward Voltage @ IF =400mA Average Peak Forward Current; D.C. = 50% Non Repetitive Forward Current t≤100µs t≤10ms Power Dissipation at Tamb=25°C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 40 400 500 1000 6.75 3 250 -55 to +150 125 UNIT V mA mV mA A A mW °C °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V(BR)R VF MIN. 40 TYP. 60 270 300 370 425 550 640 810 440 15 20 10 300 350 460 500 670 780 1050 40 MAX. UNIT V mV mV mV mV mV mV mV mV µA pF ns CONDITIONS. IR=200µA IF=50mA* IF=100mA* IF=250mA* IF=400mA* IF=750mA* IF=1000mA* IF=1500mA* IF=500mA, Tamb=100°C* VR=30V f=1MHz,VR=25V switched from IF = 500mA to IR = 500mA Measured at IR = 50mA Reverse Current Diode Capacitance Reverse Recovery Time IR CD trr ZHCS400 TYPICAL CHARACTERISTICS 1 100m 10m 1m 100m +100°C +125°C 100u 10u +50°C +25°C 10m +125°C +25°C -55°C 1u 100n 10n -55°C 1m 0 0.1 0.2 0.3 0.4 0.5 1n 0 10 20 30 40 VF - Forward Voltage (V) I F v VF VR - Reverse Voltage (V) IR v VR 0.6 t 0.4 DC 1 D=t 1/t p...