ZHCS2000

ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES High current capability Low forward voltage (VFmax=0.5V) Fast recovery time Small package size SOT23-6 APPLICATIONS Mobile telecomms, PCMIA & SCSI DC-DC Conversion High frequency rectification ORDERING INFORMATION DEVICE ZHCS2000TA ZHCS2000TC DEVICE MARKING ZS2 REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units 10000 units Top View ISSUE 1 - DECEMBER 2000 1 ZHCS2000 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current Average Peak Forward Current;D.C.=50% Non Repetitive Forward Current t ≤100 µs t ≤10ms Power Dissipation at T amb =25°C Storage Temperature Range Junction Temperature SYMBOL VR IF I FAV I FSM P tot T stg Tj VALUE 40 2 4 20 10 1.1 -55 to +150 125 UNIT V A A A A W °C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at tр5 secs. SYMBOL R θ JA R θ JA VALUE 113 73 UNIT °C/W °C/W ISSUE 1 - DECEMBER 2000 2 ZHCS2000 TYPICAL CHARACTERISTICS t1 D = t1 / t2 t2 Duty Cycle ISSUE 1 - DECEMBER 2000 3 ZHCS2000 ELECTRICAL CH...