ZHCS1006

SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT” ISSUE 1 - NOVEMBER 1997 7 1 ZHCS1006 C 1 A 3 FEATURES: High current capability Low V F APPLICATIONS: Mobile telecomms, PCMIA & SCSI DC-DC Conversion PARTMARKING DETAILS : S16 2 3 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current Forward Voltage @ IF = 1000mA(typ) Average Peak Forward Current;D.C.= 50% Non Repetitive Forward Current t ≤100 µs t≤10ms Power Dissipation at Tamb= 25° C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 60 900 600 1600 12 5 500 -55 to + 150 125 SOT23 UNIT V mA mV mA A A mW °C °C ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V (BR)R VF MIN. 60 TYP. 80 245 275 330 395 455 510 620 50 17 12 280 320 390 470 530 600 740 100 MAX. UNIT V mV mV mV mV mV mV mV µA pF ns CONDITIONS. IR= 300 µA IF= IF= IF= IF= IF= IF= IF= 50mA* 100mA* 250mA* 500mA* 750mA* 1000mA* 1500mA* Reverse Current Diode Capacitance Reverse Recovery Time IR CD t rr V R= 45V f= 1MHz,V R= 25V switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed conditions. Pulse width= 300 µs. Duty cycle ≤2% ZHCS1006 TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS 10 1 IF - Forward Current (A) IR - Reverse Current (A) 100m 10m 1m 100u 10u 1u 100n 10n 1n 0 -55°C +125°C 1 +100°C +50°C 100m +25°C 10m +125°C +25°C -55°C 1m 0 0.1 0.2 0.3...