ZHB6792

SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6792 PRELIMINARY DATA SHEET ISSUE A MAY 1998 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 70V supply * 1 Amp continuous rating PARTMARKING DETAIL – ZHB6792 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current SYMBOL V CBO V CEO V EBO I CM IC NPNs 70 70 5 2 1 PNPs -70 -70 -5 -2 -1 UNIT V V V A A °C Operating and Storage Temperature Range T j:T stg -55 to +150 SCHEMATIC DIAGRAM E1, E4 CONNECTION DIAGRAM C1,C2 B1 Q1 Q4 B4 B1 B2 E2,E3 B3 5 E1,E4 C3,C4 6 7 C1, C2 C3, C4 B2 Q2 Q3 B3 B4 E2, E3 8 1 2 3 4 ZHB6792 THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at T amb = 25°C* Any single transistor “on” Q1 and Q3 “on” or Q2 and Q4 “on” equally Derate above 25°C* Any single transistor “on” Q1 and Q3 “on” or Q2 and Q4 “on” equally Thermal Resistance - Junction to Ambient* Any single transistor “on” Q1 and Q3 “on” or Q2 and Q4 “on” equally SYMBOL P tot 1.25 2 10 16 100 62.5 W W mW/ °C mW/ °C °C/ W °C/ W VALUE UNIT 100 Thermal Resistance (°C/W) Thermal Resistance (°C/W) t1 80 tP D=t1 tP 60 t1 50 40 30 20 10 0 100us tP D=t1 tP 60 40 20 0 100us D=1 D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse D=1 D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse 1ms 10ms 100ms 1s 10s 100s 1ms 10ms 100ms 1s 10s 100s Pulse Width Pulse Width Transient Thermal Resistance Sing...