SM-8 DUAL NPN MEDIUM POWER TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT649
C1 C1 C2 C2 PARTMARKING DETAIL T649
B1 E1 B2 ...
SM-8 DUAL
NPN MEDIUM POWER
TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT649
C1 C1 C2 C2 PARTMARKING DETAIL T649
B1 E1 B2 E2 SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE 35 25 5 6 2 -55 to +150 UNIT V V V A A °C
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
3 - 333
ZDT649
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 75 15 150 0.12 0.23 0.9 0.8 200 200 150 50 240 25 55 300 50 35 25 5 0.1 10 0.1 0.3 0.5 1.25 1 TYP. MAX. UNIT V V V
µA µA µA
CONDITION...