ZDM4306N

SM-8 DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS ISSUE 1 - NOVEMBER 1995 ZDM4306N D1 D1 D2 D2 PARTMARKING DETAIL – M4306N G1 S1 G2 S2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Tj:Tstg VALUE 60 2 15 ± 20 -55 to +150 UNIT V A A V °C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally SYMBOL Ptot 2.5 3.0 20 24 50.0 41.6 W W mW/ °C mW/ °C °C/ W °C/ W VALUE UNIT * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. Note: This data is derived from development material and does not necessarily mean that the device will go into production 3 - 321 ZDM4306N ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss 700 12 60 TYP. MAX. UNIT CONDITIONS. V ID=1mA, VGS=0V ID=1mA, VDS= VGS VGS=± 20V, VDS=0V VDS=60V, VGS...