XSD57120

® SD57120 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 120 W with 13 dB gain @ 960 MHz BeO FREE PACKAGE INTERNAL INPUT MATCHING ν ν ν ν ν DESCRIPTION The SD57120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57120 is designed for high gain and broadband performance operating in common source mode at 28V. Its internal matching makes it ideal for base station applications requiring high linearity. M252 epoxy sealed ORDER CODE BRANDING SD57120 XSD57120 PIN CONNECTION 1. Drain 2. Drain 3. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ T c= 70 o C) Max. O perating Junction Temperature Storage Temperature Value 65 ± 20 14 236 200 -65 to 150 4. Gate 5. Gate Uni t V V A W o o C C THERMAL DATA R th (j-c) Junction-Case Thermal Resistance 0.55 o C/W March 2000 1/7 SD57120 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (Per Section) Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) G FS C I SS * C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 28V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 10 mA V DS = 28 V V DS = 0 V I D = 100 mA ID = 3 A ID = 3 A V DS = 28...