XP05554

Composite Transistors XP05554 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For high speed switching 2.1±0.1 0.65 q q q For high speed switching. Low collector to emitter saturation voltage VCE(sat). Two elements incorporated into one package. 2.0±0.1 s Features 0.65 1 2 3 6 5 4 0.2 0.9±0.1 s Basic Part Number of Element q 0 to 0.1 2SC3757 × 2 elements 1 : Emitter (Tr1) 2 : Base (Tr1) 3 : Base (Tr2) 0.7±0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCES VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 40 40 5 100 300 150 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C 4 : Collector (Tr2) 5 : Emitter (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: HE Internal Connection 1 2 3 Tr1 6 5 4 Tr2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time (Ta=25˚C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg Conditions VCB = 15V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = –10mA, f = 200MHz VCB ...