Document
Composite Transistors
XP04286
Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2)
Unit: mm
0.425 1.25±0.1 0.425
0.2±0.05
For switching/digital circuits
0.65
2.1±0.1
0.65
q
q
Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2.0±0.1
s Features
1 2 3
6 5 4
0.2
0.9±0.1
s Basic Part Number of Element
q
0.7±0.1
UN221N+UN1119
0 to 0.1
0.2±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings 50 50 100 –50 –50 –100 150 150 –55 to +150 Unit V V mA V V mA mW ˚C
1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin)
Marking Symbol: HO Internal Connection
1 2 3 Tr1 6 5 4
˚C
Tr2
0.12 –0.02
+0.05
1
Composite Transistors
XP04286
(Ta=25˚C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = 10V, IE = –2mA, f = 200MHz Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ –30% 4.7 0.1 150 MHz 4.9 0.2 +30% 80 min 50 50 0.1 0.5 0.2 400 0.25 V V V kΩ typ max Unit V V µA µA mA
s Electrical Characteristics
q
Tr1
Parameter
Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency
q
Tr2
Parameter Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = –10V, IE = 1mA, f = 200MHz Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 VCE = –10V, IC = –5mA IC = –10mA, IB = – 0.3mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ –30% 1 0.1 80 MHz –4.9 – 0.2 +30% 30 – 0.25 V V V kΩ min –50 –50 – 0.1 – 0.5 –1.5 typ max Unit V V µA µA mA
Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency
2
Composite Transistors
Common characteristics chart PT — Ta
250
XP04286
Total power dissipation PT (mW)
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of Tr1 IC — VCE
160 Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA
VCE(sat) — IC
10
hFE — IC
IC/IB=10 480 VCE=10V
Collector to emitter saturation voltage VCE(sat) (V)
Forward current transfer ratio hFE
400 Ta=75˚C
Collector current IC (mA)
120 100 80 60 40
1
320 25˚C 240
0.1 25˚C
Ta=75˚C
160
–25˚C
0.1mA 20 0 0 2 4 6 8 10 12
80
–25˚C 0.01 1 10 100 1000
0 1 10 100 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C 10000 VO=5V Ta=25˚C 100
VIN — IO
VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
3
100
Input voltage VIN (V)
0.6 0.8 1 1.2 1.4
1000
10
1
2
10
0.1
1
0 1 10 100
1 0.4
0.01 0.1
1
10
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
3
Composite Transistors
Characteristics charts of Tr2 IC — VCE
–240
XP04286
VCE(sat) — IC
–100
hFE — IC
IC/IB=10 160 VCE= –10V
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C –200
–30 –10 –3 –1 –0.3 25˚C –0.1 –0.03 –25˚C
Forward current transfer ratio hFE
Collector current IC (mA)
–160
IB=–1.0mA –0.9mA –0.8mA –0.7mA
120 Ta=75˚C 80 25˚C –25˚C
–120
Ta=75˚C
–80
–0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA 0 –2 –4 –6 –8 –10 –12
40
–40
0
–0.01 –0.1 –0.3
–1
–3
–10
–30
–100
0 –1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6 –10000 f=1MHz IE=0 Ta=25˚C –3000
IO — VIN
VO=–5V Ta=25˚C –100 –30
VIN — IO
VO= –0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
Input voltage VIN (V)
–0.6 –0.8 –1.0 –1.2 –1.4
–1000 –300 –100 –30 –10 –3
–10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3
3
2
1
0 –0.1 –0.3
–1
–3
–10
–30
–100
–1 –0.4
–1
–3
–10
–30
–100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
4
.