Composite Transistors
XP01531
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.65
s Fe...
Composite
Transistors
XP01531
Silicon
NPN epitaxial planer
transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.65
s Features
q q
Two elements incorporated into one package. (Emitter-coupled
transistors) Reduction of the mounting area and assembly cost by one half.
2.0±0.1
1 2 3
5
0.65
4
0.2
q
2SC3130 × 2 elements
0.7±0.1
s Basic Part Number of Element
0.9± 0.1
0.12 – 0.02
0.2±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg
(Ta=25˚C)
Ratings 15 10 3 50 150 150 –55 to +150 Unit V V V mA mW ˚C ˚C
1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2)
4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin)
Marking Symbol: 9F Internal Connection
1 2 3 4 Tr1 5
0 to 0.1
Tr2
s Electrical Characteristics
Parameter Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Collector to base parameter Common base reverse transfer capacitance
(Ta=25˚C)
Symbol VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob rbb'·CC Crb Conditions IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCB = 10V, IE = 0 VCE = 10V, IB = 0 VCE = 4V, IC = 5mA IC = 20mA, IB = 4mA VCB = 4V, IE = –5mA, f = 200MHz VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE =...