XN6A554

Composite Transistors XN6A554 Silicon NPN epitaxial planer transistor Unit: mm For high speed switching 2.8 –0.3 0.65±0.15 6 0.95 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.5 –0.05 2.9 –0.05 q q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. Low VCE(sat). 1.9±0.1 +0.2 s Features 5 2 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 40 40 5 100 300 300 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Collector (Tr2) 4 : Emitter (Tr2) 5 : Emitter (Tr1) 6 : Base (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: DT Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-off time Turn-on time Storage time *1 *2 (Ta=25˚C) Symbol ICBO IEBO hFE hFE (small/large)*1 VCE(sat) VBE(sat) fT Cob ton toff tstg *2 Conditions VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA VCE = 1V,...