XN5553

Composite Transistors XN5553 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 0.65±0.15 2.8 –0.3 +0.2 +0.25 1.5 –0.05 6 0.65±0.15 1 0.3 –0.05 0.5 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SD1149 × 2 elements 1.1–0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 100 100 15 20 50 300 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Emitter (Tr2) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 4U Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Noise voltage Transition frequency (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) NV fT Conditions IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCB = 60V, IE = 0 VCE = 60V, IB = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCE = 10V, IC = 1mA, GV = 80dB Rg = 100KΩ, Function = FLAT VCB = ...