DatasheetsPDF.com

XN4609 Dataheets PDF



Part Number XN4609
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN(PNP) epitaxial planer transistor
Datasheet XN4609 DatasheetXN4609 Datasheet (PDF)

Composite Transistors XN4609 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For amplification of low frequency output (Tr1) For general amplification (Tr2) 2.8 –0.3 0.65±0.15 6 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.5 –0.05 2.9 –0.05 1.9±0.1 s Features q q 0.95 +0.2 5 2 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.95 4 3 s Basic Part Number of Element q .

  XN4609   XN4609



Document
Composite Transistors XN4609 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For amplification of low frequency output (Tr1) For general amplification (Tr2) 2.8 –0.3 0.65±0.15 6 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.5 –0.05 2.9 –0.05 1.9±0.1 s Features q q 0.95 +0.2 5 2 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 0.4±0.2 s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Ratings 25 20 12 0.5 1 –60 –50 –7 –100 –200 300 150 –55 to +150 Unit V V V A A 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 5F Internal Connection 6 Tr1 1 2 3 Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage V V V mA mA mW ˚C ˚C 5 4 Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Tr2 Overall Junction temperature Storage temperature 0 to 0.05 2SD1328+2SB709A 0.1 to 0.3 0.8 0.16–0.06 +0.2 +0.1 1.45±0.1 +0.1 +0.1 1 Composite Transistors XN4609 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*2 Conditions IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCB = 25V, IE = 0 VCE = 2V, IC = 0.5A*1 VCE = 2V, IC = 1A*1 IC = 0.5A, IB = 20mA IC = 0.5A, IB = 20mA VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 10 1.0 200 60 0.13 0.4 1.2 V V MHz pF Ω min 25 20 12 0.1 800 typ max Unit V V V µA s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON Resistance q Tr2 Parameter Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCB = –20V, IE = 0 VCE = –10V, IE = 0 VCE = –10V, IC = –2mA IC = –100mA, IB = –10mA VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz 160 – 0.3 80 2.7 min –60 –50 –7 – 0.1 –100 460 V MHz pF typ max Unit V V V µA µA Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *1 *2 Pulse measurement Ron test circuit IB=1mA f=1kHz V=0.3V 1kΩ VB VV VA VB Ron= !1000(Ω) VA–VB 2 Composite Transistors Common characteristics chart PT — Ta 500 XN4609 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) Characteristics charts of Tr.


XN4608 XN4609 XN4683


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)