Document
Composite Transistors
XN4609
Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2)
Unit: mm
For amplification of low frequency output (Tr1) For general amplification (Tr2)
2.8 –0.3 0.65±0.15 6
+0.2 +0.25
1.5 –0.05
0.65±0.15 1
0.3 –0.05
0.5 –0.05
2.9 –0.05
1.9±0.1
s Features
q q
0.95
+0.2
5
2
Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half.
0.95
4
3
s Basic Part Number of Element
q
1.1–0.1
0.4±0.2
s
Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Ratings 25 20 12 0.5 1 –60 –50 –7 –100 –200 300 150 –55 to +150 Unit V V V A A
1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)
4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin)
Marking Symbol: 5F Internal Connection
6 Tr1 1 2 3
Tr1
Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage
V V V mA mA mW ˚C ˚C
5 4
Tr2
Emitter to base voltage Collector current Peak collector current Total power dissipation
Tr2
Overall Junction temperature Storage temperature
0 to 0.05
2SD1328+2SB709A
0.1 to 0.3
0.8
0.16–0.06
+0.2
+0.1
1.45±0.1
+0.1
+0.1
1
Composite Transistors
XN4609
(Ta=25˚C)
Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*2 Conditions IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCB = 25V, IE = 0 VCE = 2V, IC = 0.5A*1 VCE = 2V, IC = 1A*1 IC = 0.5A, IB = 20mA IC = 0.5A, IB = 20mA VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 10 1.0 200 60 0.13 0.4 1.2 V V MHz pF Ω min 25 20 12 0.1 800 typ max Unit V V V µA
s Electrical Characteristics
q
Tr1
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON Resistance
q
Tr2
Parameter Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCB = –20V, IE = 0 VCE = –10V, IE = 0 VCE = –10V, IC = –2mA IC = –100mA, IB = –10mA VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz 160 – 0.3 80 2.7 min –60 –50 –7 – 0.1 –100 460 V MHz pF typ max Unit V V V µA µA
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
*1 *2
Pulse measurement Ron test circuit
IB=1mA f=1kHz V=0.3V 1kΩ
VB
VV
VA
VB Ron= !1000(Ω) VA–VB
2
Composite Transistors
Common characteristics chart PT — Ta
500
XN4609
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (˚C)
Characteristics charts of Tr.